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BCP53-16T1G Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer BCP53-16T1G
Bauteilbeschribung  PNP Silicon Epitaxial Transistors
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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BCP53 Series
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−100
Vdc
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−80
Vdc
Collector−Emitter Breakdown Voltage
(IC = −100 mAdc, RBE = 1.0 kW)
V(BR)CER
−100
Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
− 5.0
Vdc
Collector−Base Cutoff Current
(VCB = − 30 Vdc, IE = 0)
ICBO
−100
nAdc
Emitter−Base Cutoff Current
(VEB = − 5.0 Vdc, IC = 0)
IEBO
−10
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = − 5.0 mAdc, VCE = − 2.0 Vdc)
All Part Types
(IC = −150 mAdc, VCE = − 2.0 Vdc)
BCP53, SBCP53
BCP53−10, SBCP53−10
BCP53−16, SBCP53−16, NSVBCP53−16
(IC = − 500 mAdc, VCE = − 2.0 Vdc)
All Part Types
hFE
25
40
63
100
25
250
160
250
Collector−Emitter Saturation Voltage
(IC = − 500 mAdc, IB = − 50 mAdc)
VCE(sat)
− 0.5
Vdc
Base−Emitter On Voltage
(IC = − 500 mAdc, VCE = − 2.0 Vdc)
VBE(on)
−1.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = − 5.0 Vdc, f = 35 MHz)
fT
50
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.


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