Datenblatt-Suchmaschine für elektronische Bauteile |
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CAS325M12HM2 Datenblatt(PDF) 7 Page - Cree, Inc |
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CAS325M12HM2 Datenblatt(HTML) 7 Page - Cree, Inc |
7 / 7 page 77 CAS325M12HM2 Rev. A, 12-2016 Copyright © 2014 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power • The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based moules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot. • The module utilizes the ESQT-105-02-G-D-XXX family of elevated socket connectors from Samtec, available in varying height ac- cording to the customer’s preference • Companion Parts: CGD15HB62LP + High Performance Three Phase Evaluation Unit • Some values were obtained from the CPM2-1200-0025B and CPW5-1200-Z050B device datasheet. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited toequipmentusedintheoperationofnuclearfacilities,life-supportmachines,cardiacdefibrillatorsorsimilaremergencymedical equipment,aircraftnavigationorcommunicationorcontrolsystems,airtrafficcontrolsystems. • The product described is not eligible for Distributor Stock Rotation or Inventory Price Protection. Important Notes |
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