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CAS325M12HM2 Datenblatt(PDF) 7 Page - Cree, Inc

Teilenummer CAS325M12HM2
Bauteilbeschribung  Ultra Low Loss, Low (5 nH) Inductance
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Hersteller  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

CAS325M12HM2 Datenblatt(HTML) 7 Page - Cree, Inc

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CAS325M12HM2 Rev. A, 12-2016
Copyright © 2014 - 2016 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based moules. Therefore, special
precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs
to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is
required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot.
The module utilizes the ESQT-105-02-G-D-XXX family of elevated socket connectors from Samtec, available in varying height ac-
cording to the customer’s preference
Companion Parts: CGD15HB62LP + High Performance Three Phase Evaluation Unit
Some values were obtained from the CPM2-1200-0025B and CPW5-1200-Z050B device datasheet.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
toequipmentusedintheoperationofnuclearfacilities,life-supportmachines,cardiacdefibrillatorsorsimilaremergencymedical
equipment,aircraftnavigationorcommunicationorcontrolsystems,airtrafficcontrolsystems.
The product described is not eligible for Distributor Stock Rotation or Inventory Price Protection.
Important Notes


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