Datenblatt-Suchmaschine für elektronische Bauteile |
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BC846BM3T5G Datenblatt(PDF) 3 Page - ON Semiconductor |
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BC846BM3T5G Datenblatt(HTML) 3 Page - ON Semiconductor |
3 / 5 page BC846BM3T5G, NSVBC846BM3T5G http://onsemi.com 3 TYPICAL CHARACTERISTICS Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) 1,000 100 10 1 0.1 10 100 1,000 100 10 1 0.1 0 0.1 0.2 0.3 0.4 Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter “On” Voltage IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) 1,000 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1,000 100 10 1 0.1 0 0.4 0.2 0.8 1.0 1.2 Figure 5. Base−Emitter Temperature Coefficient Figure 6. Collector Saturation Region IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) 1,000 100 10 1 0.1 −3.0 −2.6 −2.2 −1.8 −1.4 −1.0 −0.6 −0.2 100 10 1 0.1 0.01 0 0.4 0.8 1.2 1.6 2.0 VCE = 5 V 150°C 25°C −55°C 150°C 25°C −55°C IC/IB = 20 IC/IB = 20 150°C 25°C −55°C 0.6 VCE = 5 V 150°C 25°C −55°C VCE = 5 V −55°C to 150°C qVB, for VBE TA = 25°C IC = 200 mA 100 mA 50 mA 20 mA 10 mA |
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