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DL-3150-105 Datenblatt(PDF) 1 Page - Sanyo Semicon Device

Teilenummer DL-3150-105
Bauteilbeschribung  Infrared Laser Diode (Frame Type)
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Hersteller  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

DL-3150-105 Datenblatt(HTML) 1 Page - Sanyo Semicon Device

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DL-3150-105
No.7564 1/3
Features
• Wavelength : 790 nm (Typ.)
• Frame type
• Compact lightweight thin package
• Straight leads
Absolute Maximum Ratings at Tc=25
°C (as per JISC 7032)
Parameter
Symbol Condition
Ratings
Unit
Light Output
Po
Kink free
5
mW
Reverse Voltage
Laser
VR
-2
V
PIN
-
30
Operating Temperature
Topr
1)
--10 to +70
°C
Storage Temperature
Tstg
1)
--40 to +85
°C
Soldering Temperature
Tsol
2)
260
°C
1) Case temperature
2) Soldering Time
≤3s, 1.6 mm from the root of a lead.
Electrical and Optical Characteristics 3) 4) at Tc=25
°C
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Threshold Current
Ith
CW
--35
50
mA
Operating Current
Iop
Po=3mW
--45
60
mA
Operating Voltage
Vop
Po=3mW
1.6
1.8
2.3
V
Peak Lasing Wavelength
5)
λ p
Po=3mW
-
790
800
nm
Light Output Power
Po
-
-
3
-
mW
Beam
6)
Perpendicular
θ ⊥
Po=3mW
25
35
45
°
Divergence
Parallel
θ //
Po=3mW
8
10
14
°
Off Axis
Perpendicular
∆ θ ⊥
Po=3mW
----
±3
°
Angle
Parallel
∆ θ //
Po=3mW
----
±2
°
Differential Efficiency
dPo/dIop
Po=3mW
0.18
0.35
--
mW/mA
Monitoring Output Current
Im
Po=3mW
0.05
0.20
0.40
mA
3) Initial values
4) All the above values are evaluated with Tottori Sanyo’s measuring apparatus
5) Wafer lot go/no-go decision criteria
6) Full angle at half maximum
Note : The above product specification are subject to change without notice.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
DL-3150-105
Infrared Laser Diode
Infrared Laser Diode (Frame Type)
LD
PD
13
2
Package Dimensions
Pin Connection
91003 YY IM
Ordering number : ENN7564
Pin No.
3.2
3-- 0.4
±0.1
2-
-C
0.5
8.0
0
--0.1
4.0
±0.12
3.7
±0.15 3.0±0.15
321
(1.6)
2--0.4
6.4
LD facet
Frame type(CD)
1.6
4.2


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