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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF6603 Datenblatt(PDF) 4 Page - International Rectifier |
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IRF6603 Datenblatt(HTML) 4 Page - International Rectifier |
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4 / 11 page  IRF6603 4 www.irf.com Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds+ Cgd 0.1 1 10 100 1000 0.2 0.5 0.7 1.0 1.2 1.5 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 150 C J ° T = 25 C J ° 0 1 10 100 1000 VDS , Drain-toSource Voltage (V) 0.1 1 10 100 1000 Tc = 25°C Tj = 150°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 0 10 20304050 QG Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS= 15V ID= 20A |
Ähnliche Teilenummer - IRF6603 |
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Ähnliche Beschreibung - IRF6603 |
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