Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF6617 Datenblatt(PDF) 1 Page - International Rectifier |
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IRF6617 Datenblatt(HTML) 1 Page - International Rectifier |
1 / 8 page www.irf.com 1 3/12/04 IRF6617 HEXFET® Power MOSFET Notes through are on page 2 l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with Existing Surface Mount Techniques Description The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac- turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6617 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6617 has been optimized for parameters that are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket. DirectFET ISOMETRIC ST Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details) SQ SX ST MQ MX MT PD - 95847 VDSS RDS(on) max Qg(typ.) 30V 8.1m Ω@V GS = 10V 11nC 10.3m Ω@V GS = 4.5V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Power Dissipation g PD @TA = 70°C Power Dissipation g W PD @TC = 25°C Power Dissipation EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient fj ––– 58 RθJA Junction-to-Ambient gj 12.5 ––– RθJA Junction-to-Ambient hj 20 ––– °C/W RθJC Junction-to-Case ij ––– 3.0 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– -40 to + 150 2.1 0.017 1.4 42 27 12 Max. 14 11 120 ±20 30 55 |
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