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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF6618TR1 Datenblatt(PDF) 1 Page - International Rectifier |
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IRF6618TR1 Datenblatt(HTML) 1 Page - International Rectifier |
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1 / 8 page  www.irf.com 1 4/2/04 IRF6620 HEXFET® Power MOSFET Notes through are on page 2 l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with Existing Surface Mount Techniques DirectFET ISOMETRIC MX Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) VDSS RDS(on) max Qg(typ.) 20V 2.7m Ω@V GS = 10V 28nC 3.6m Ω@V GS = 4.5V Description The IRF6620 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech- niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6620 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6620 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. SQ SX ST MQ MX MT Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Power Dissipation g PD @TA = 70°C Power Dissipation g W PD @TC = 25°C Power Dissipation EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient fj ––– 45 RθJA Junction-to-Ambient gj 12.5 ––– RθJA Junction-to-Ambient hj 20 ––– °C/W RθJC Junction-to-Case ij ––– 1.4 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– -40 to + 150 2.8 0.017 1.8 89 39 22 Max. 27 22 220 ±20 20 150 PD - 95823A |
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Ähnliche Beschreibung - IRF6618TR1 |
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