TC1301

REV.2_04/12/2004

TRANSCOM, INC., 90 Dasoong 7

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

P 1 / 6

Low Noise and Medium Power GaAs FETs

FEATURES

• Low Noise Figure:

NF = 0.8 dB Typical at 12 GHz

• High Associated Gain:

Ga = 10 dB Typical at 12 GHz

• High Dynamic Range:

• Breakdown Voltage:

≥ 9 V

• Lg = 0.25 µm, Wg = 600 µm

• All-Gold Metallization for High Reliability

• 100 % DC Tested

DESCRIPTION

The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very

low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40

GHz and suitable for low noise and medium power amplifier applications including a wide range of

commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond

pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

°°°°C)

Symbol

CONDITIONS

MIN

TYP

MAX

UNIT

NF

0.8

1.0

dB

9

10

dB

Output Power at 1dB Gain Compression Point , f = 12GHz

24

dBm

Linear Power Gain, f = 12GHz

10

11

dB

180

mA

200

mS

-1.0*

Volts

9

12

Volts

Thermal Resistance

22

°C/W

PHOTO ENLARGEMENT

* For the tight control of the pinch-off voltage range, we divide TC1301 into 3 model numbers to fit customer design requirement

(1)TC1301P0710 : Vp = -0.7V to -1.0V (2)TC1301P0811 : Vp = -0.8V to -1.1V (3)TC1301P0912 : Vp = -0.9V to -1.2V

If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for

details.