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KM29W040AT Datenblatt(PDF) 3 Page - Samsung semiconductor

Teilenummer KM29W040AT
Bauteilbeschribung  512K x 8 bit NAND Flash Memory
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Hersteller  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM29W040AT Datenblatt(HTML) 3 Page - Samsung semiconductor

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KM29W040AT, KM29W040AIT
FLASH MEMORY
3
Figure 1. FUNCTIONAL BLOCK DIAGRAM
Figure 2. ARRAY ORGANIZATION
NOTE : *(1) : X can be VIL or VIH
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
2nd Cycle
A8
A9
A10
A11
A12
A13
A14
A15
3rd Cycle
A16
A17
A18
X*(1)
X*
X*
*X
*X
Column Address (A0-A4)
Frame Address (A5-A6)
Row Address (A7-A11)
Block Address (A12-A18)
128Byte Column
4M : 4K Row
(=128 Blocks)
32 Byte
8 bit
Good Block
I/O0 ~ I/O7
1 Frame = 32 Byte
1 Row
= 4 Frames = 128 Bytes
1 Block = 32 rows = 4K Bytes
1 Device = 32B x 4frames x 32rows x 128blocks
= 4Mbits
Frame Register
1
2
3
4
X-Buffers
4M Bit
Command
NAND Flash ARRAY
32Byte x 4frame x 4096row
Y-Gating
Page Register & S/A
I/O Buffers & Latches
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Register
Control Logic
& High Voltage
Generator
Global Buffers
A7 - A18
A0 - A6
Command
CE
RE
WE
CLE ALE WP
I/O0
I/O7
The 1st Block (4KB)
1Block(32Row)
(4K Byte)


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