Si4590DY

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Vishay Siliconix

S14-0146-Rev. A, 27-Jan-14

3

Document Number: 62937

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Turn-On Delay Time

N-Channel

P-Channel

N-Ch

-

5

10

ns

P-Ch

-

7

15

Rise Time

N-Ch

-

11

20

P-Ch

-

11

20

Turn-Off Delay Time

N-Ch

-

12

25

P-Ch

-

65

130

Fall Time

N-Ch

-

6

15

P-Ch

-

20

40

Turn-On Delay Time

N-Channel

P-Channel

N-Ch

-

32

65

P-Ch

-

55

110

Rise Time

N-Ch

-

73

150

P-Ch

-

80

160

Turn-Off Delay Time

N-Ch

-

14

30

P-Ch

-

42

85

Fall Time

N-Ch

-

12

25

P-Ch

-

25

50

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

N-Ch

-

-

3

A

P-Ch

-

-

-3.5

N-Ch

-

-

30

P-Ch

-

-

-20

Body Diode Voltage

N-Ch

-

0.83

1.2

V

P-Ch

-

-0.8

-1.2

Body Diode Reverse Recovery Time

N-Channel

P-Channel

N-Ch

-

30

60

ns

P-Ch

-

42

85

Body Diode Reverse Recovery Charge

N-Ch

-

27

55

nC

P-Ch

-

93

190

Reverse Recovery Fall Time

N-Ch

-

19

-

ns

P-Ch

-

36

-

Reverse Recovery Rise Time

N-Ch

-

11

-

P-Ch

-

6

-

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT