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BF720T3G Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer BF720T3G
Bauteilbeschribung  NPN Silicon Transistor
Download  4 Pages
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BF720T3G Datenblatt(HTML) 2 Page - ON Semiconductor

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BF720T1G, SBF720T1G, BF720T3G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
−
Vdc
Collector-Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
300
−
Vdc
Collector-Emitter Breakdown Voltage
(IC = 100 mAdc, RBE = 2.7 kW)
V(BR)CER
300
−
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
−
Vdc
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
−
10
nAdc
Collector−Emitter Cutoff Current
(VCE = 250 Vdc, RBE = 2.7 kW)
(VCE = 200 Vdc, RBE = 2.7 kW, TJ = 150C)
ICER
−
−
50
10
nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 25 mAdc, VCE = 20 Vdc)
hFE
50
−
−
Collector-Emitter Saturation Voltage
(IC = 30 mAdc, IB = 5.0 mAdc)
VCE(sat)
−
0.6
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 35 MHz)
fT
60
−
MHz
Feedback Capacitance
(VCE = 30 Vdc, IC = 0, f = 1.0 MHz)
Cre
−
1.6
pF


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