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SI4828DY Datenblatt(PDF) 1 Page - Vishay Siliconix

Teilenummer SI4828DY
Bauteilbeschribung  Dual N-Channel 30-V (D-S) MOSFET
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
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SI4828DY Datenblatt(HTML) 1 Page - Vishay Siliconix

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Si4828DY
Vishay Siliconix
New Product
Document Number: 71181
S-00983—Rev. A, 15-May-00
www.vishay.com
S FaxBack 408-970-5600
1
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
Channel-1
30
0.022 @ VGS = 10 V
7.5
Channel-1
30
0.030 @ VGS = 4.5 V
6.5
Channel-2
30
0.0135 @ VGS = 10 V
9.8
Channel-2
0.0175 @ VGS = 4.5 V
8.5
S1
D1
G1
D1
S2
D2
G2
D2
SO-8
5
6
7
8
Top View
2
3
4
1
G2
S2
G1
S1
D2
D2
N-Channel 2
MOSFET
N-Channel 1
MOSFET
D1
D1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
P
Sb l
Channel-1
Channel-2
Ui
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
7.5
5.8
9.8
7.5
A
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
6
4.6
7.8
6
A
Pulsed Drain Current
IDM
30
40
A
Continuous Source Current (Diode Conduction)a
IS
1.8
1.06
1.8
1.06
Maximum Power Dissipationa
TA = 25_C
PD
2
1.17
2
1.17
W
Maximum Power Dissipationa
TA = 70_C
PD
1.78
0.75
1.28
0.75
W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
P
Sb l
Channel-1
Channel-2
Ui
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction-to-Ambienta
t
v 10 sec
RthJA
55
62.5
53
62.5
_C/W
Maximum Junction-to-Ambienta
Steady-State
RthJA
89
107
89
107
_C/W
Maximum Junction-to-Foot (Drain)
Steady-State
RthJC
36
45
34
42
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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