Datenblatt-Suchmaschine für elektronische Bauteile |
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SD103ATW Datenblatt(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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SD103ATW Datenblatt(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification Surface Mount Schottky Barrier Diodes SD103ATW G031 www.gmicroelec.com Rev.A 1 FEATURES Low forward voltage drop. Guard ring construction for transient protection. Fast switching. Low leakage current. Three fully isolated schottky diodes. Also available in lead free version. SOT-363 APPLICATIONS High speed switching. ORDERING INFORMATION Type No. Marking Package Code SD103ATW KLL SOT-363 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Characteristic Value Unit VRRM VRWM VR Peak Repetitive reverse Voltage Working peak reverse voltage DC blocking voltage 40 V VR(RMS) RMS reverse Voltage 28 V IFM Forward continuous current (max.) 350 mA IO Average rectified current 175 mA IFSM Non-Repetitive peak forward surge current @t ≤10ms 1.0 A RθJA Thermal resistance, Junction to ambient air 500 ℃ /W PD Power Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55 to +125 ℃ Pb Lead-free |
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