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SI4818DY-T1 Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI4818DY-T1 Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 8 page Si4818DY Vishay Siliconix www.vishay.com 4 Document Number: 71122 S-31062—Rev. B, 26-May-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−1 0.00 0.02 0.04 0.06 0.08 0.10 0 2468 10 On-Resistance vs. Gate-to-Source Voltage VGS - Gate-to-Source Voltage (V) ID = 6.3 A 0.001 0 1 100 40 60 10 0.1 Single Pulse Power, Junction-to-Ambient Time (sec) 20 80 - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 150_C ID = 250 mA 40 10 1 2 1 0.1 0.01 10-4 10-3 10-2 10-1 1 10 600 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ - Temperature (_C) Source-Drain Diode Forward Voltage Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) VSD - Source-to-Drain Voltage (V) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 100 TJ = 25_C 0.01 |
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