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SI4842DY Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI4842DY Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Si4842DY Vishay Siliconix New Product Document Number: 71325 S-03662—Rev. B, 14-Apr-03 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 30 0.0045 @ VGS = 10 V 23 30 0.006 @ VGS = 4.5 V 19 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 23 15 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 19 12 A Pulsed Drain Current (10 ms Pulse Width) IDM 60 A Continuous Source Current (Diode Conduction)a IS 2.9 1.3 Maximum Power Dissipationa TA = 25_C PD 3.5 1.6 W Maximum Power Dissipationa TA = 70_C PD 2.2 1 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 10 sec R 29 35 Maximum Junction-to-Ambienta Steady State RthJA 67 80 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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