SI4921DY datasheet(1/5 Pages) VISHAY

Teilenummer	SI4921DY

Bauteilbeschribung	Dual P-Channel 30-V (D-S) MOSFET

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FEATURES

D TrenchFETr Power MOSFET

D Advanced High Cell Density Process

APPLICATIONS

D Load Switches

- Notebook PCs

- Desktop PCs

- Game Stations

D Battery Switch

Si4921DY

Vishay Siliconix

New Product

Document Number: 72109

S-03181—Rev. A, 17-Feb-03

www.vishay.com

1

Dual P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

- 30

0.025 @ VGS = - 10 V

- 7.3

- 30

0.042 @ VGS = - 4.5 V

- 5.6

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

S1

G1

D1

P-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

- 7.3

- 5.5

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

- 5.8

- 4.4

A

Pulsed Drain Current

IDM

-30

A

continuous Source Current (Diode Conduction)a

IS

- 1.7

- 0.9

Maximum Power Dissipationa

TA = 25_C

PD

2.0

1.1

W

Maximum Power Dissipationa

TA = 70_C

PD

1.3

0.7

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi

ta

t

v 10 sec

R

46

62.5

Maximum Junction-to-Ambienta

Steady State

RthJA

80

110

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

24

32

C/W

Notes

a.

Surface Mounted on 1 ” x 1” FR4 Board.

Ähnliche Beschreibung - SI4921DY

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
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