Datenblatt-Suchmaschine für elektronische Bauteile |
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SM1J43 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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SM1J43 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page SM1G43,SM1J43 2001-07-10 1 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM1G43,SM1J43 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S On−State Current : IT (RMS) = 1A l Higt Commutating (dv / dt) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT SM1G43 400 Repetitive Peak Off−State Voltage SM1J43 VDRM 600 V R.M.S On−State Current (Full Sine Waveform Tc = 74°C) IT (RMS) 1.0 A 8 (50Hz) Peak One Cycle Surge On−State Current (Non-Repetitive) ITSM 8.8 (60Hz) A I 2 t Limit Value I 2 t 0.32 A 2 s Peak Gate Power Dissipation PGM 1 W Average Gate Power Dissipation PG (AV) 0.1 W Peak Gate Voltage VGM 6 V Peak Gate Current IGM 0.5 A Junction Temperature Tj −40~125 °C Storage Temperature Range Tstg −40~125 °C Unit: mm JEDEC TO−92 JEITA SC−43 TOSHIBA 13−5A1E Weight: 0.2g |
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