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SM2GZ47 Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer SM2GZ47
Bauteilbeschribung  AC POWER CONTROL APPLICATIONS
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SM2GZ47 Datenblatt(HTML) 2 Page - Toshiba Semiconductor

  SM2GZ47 Datasheet HTML 1Page - Toshiba Semiconductor SM2GZ47 Datasheet HTML 2Page - Toshiba Semiconductor SM2GZ47 Datasheet HTML 3Page - Toshiba Semiconductor SM2GZ47 Datasheet HTML 4Page - Toshiba Semiconductor SM2GZ47 Datasheet HTML 5Page - Toshiba Semiconductor  
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SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A
2001-07-10
2
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off−State Current
IDRM
VDRM = Rated
―
―
20
µA
I
T2 (+) , Gate (+)
―
―
1.5
II
T2 (+) , Gate (−)
―
―
1
III
T2 (−) , Gate (−)
―
―
1
Gate Trigger Voltage
IV
VGT
VD = 12V
RL = 20Ω
T2 (−) , Gate (+)
―
―
―
V
I
T2 (+) , Gate (+)
―
―
8
II
T2 (+) , Gate (−)
―
―
8
III
T2 (−) , Gate (−)
―
―
8
SM2GZ47
SM2JZ47
IV
T2 (−) , Gate (+)
―
―
―
I
T2 (+) , Gate (+)
―
―
5
II
T2 (+) , Gate (−)
―
―
5
III
T2 (−) , Gate (−)
―
―
5
Gate Trigger
Current
SM2GZ47A
SM2JZ47A
IV
IGT
VD = 12V
RL = 20Ω
T2 (−) , Gate (+)
―
―
―
mA
Peak On−State Voltage
VTM
ITM = 3A
―
―
1.7
V
Gate Non−Trigger Voltage
VGD
VD = Rated, Tc = 125°C
0.2
―
―
V
Holding Current
IH
RL = 100Ω
―
―
10
mA
Thermal Resistance
Rth (j−a)
Junction to Ambient, AC
―
―
55
°C / W


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