Datenblatt-Suchmaschine für elektronische Bauteile |
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SS8050W Datenblatt(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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SS8050W Datenblatt(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 4 page Production specification Silicon Epitaxial Planar Transistor SS8050W F061 www.gmicroelec.com Rev.A 1 FEATURES Collector Current.(IC= 1.5A ) Complementary To SS8550W. Collector dissipation:PC=200mW(TC=25 ℃) APPLICATIONS High Collector Current. SOT-323 ORDERING INFORMATION Type No. Marking Package Code SS8050W Y1 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1.5 A PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 5 V Collector cut-off current ICBO VCB=40V,IE=0 0.1 μA Collector cut-off current ICEO VCE=20V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA Pb Lead-free |
Ähnliche Teilenummer - SS8050W_14 |
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Ähnliche Beschreibung - SS8050W_14 |
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