Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

STD5407N Datenblatt(PDF) 1 Page - ON Semiconductor

Teilenummer STD5407N
Bauteilbeschribung  Power MOSFET
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

STD5407N Datenblatt(HTML) 1 Page - ON Semiconductor

  STD5407N Datasheet HTML 1Page - ON Semiconductor STD5407N Datasheet HTML 2Page - ON Semiconductor STD5407N Datasheet HTML 3Page - ON Semiconductor STD5407N Datasheet HTML 4Page - ON Semiconductor STD5407N Datasheet HTML 5Page - ON Semiconductor STD5407N Datasheet HTML 6Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 6 page
background image
© Semiconductor Components Industries, LLC, 2014
October, 2016 − Rev. 7
1
Publication Order Number:
NTD5407N/D
NTD5407N, STD5407N,
NVD5407N
Power MOSFET
40 V, 38 A, Single N−Channel, DPAK
Features
Low RDS(on)
High Current Capability
Low Gate Charge
STD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free and are RoHS Compliant
Applications
Electronic Brake Systems
Electronic Power Steering
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
Current − RqJC
Steady
State
TC = 25°C
ID
38
A
TC = 100°C
27
Power Dissipation −
RqJC
Steady
State
TC = 25°C
PD
75
W
Continuous Drain
Current RqJA (Note 1)
Steady
State
TA = 25°C
ID
7.6
A
TA = 100°C
5.3
Power Dissipation −
RqJA (Note 1)
Steady
State
TA = 25°C
PD
2.9
W
Pulsed Drain Current
tp = 10 ms
IDM
75
A
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
175
°C
Source Current (Body Diode)
IS
36
A
Single Pulse Drain−to Source Avalanche
Energy − (VDD = 50 V, VGS = 10 V, IPK = 17 A,
L = 1 mH, RG = 25 W)
EAS
150
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol
Max
Unit
Junction−to−Case (Drain)
RθJC
2.0
°C/W
Junction−to−Ambient (Note 1)
RθJA
52
°C/W
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
www.onsemi.com
MARKING DIAGRAM
V(BR)DSS
RDS(ON) TYP
ID MAX
(Note 1)
40 V
21 m
W @ 10 V
38 A
DPAK
CASE 369C
STYLE 2
N−Channel
D
S
G
1
AYWW
54
07NG
Device
Package
Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
A
= Assembly Location*
Y
= Year
WW
= Work Week
5407N
= Specific Device Code
G
= Pb−Free Device
STD5407NT4G*
DPAK
(Pb−Free)
2500 / Tape &
Reel
1 2
3
4
NTD5407NT4G
DPAK
(Pb−Free)
2500 / Tape &
Reel
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NVD5407NT4G*
DPAK
(Pb−Free)
2500 / Tape &
Reel


Ähnliche Teilenummer - STD5407N

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
ON Semiconductor
STD5407N ONSEMI-STD5407N Datasheet
120Kb / 6P
   40 V, 38 A, Single N-Channel, DPAK
July, 2013 ??Rev. 5
More results

Ähnliche Beschreibung - STD5407N

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
ON Semiconductor
NTP35N15G ONSEMI-NTP35N15G Datasheet
161Kb / 7P
   Power MOSFET Power MOSFET
May, 2010 ??Rev. 4
NTMS4937N ONSEMI-NTMS4937N Datasheet
142Kb / 5P
   Power MOSFET Power MOSFET
September, 2009 ??Rev. 0
logo
Fuji Electric
2SK2052-R FUJI-2SK2052-R Datasheet
146Kb / 10P
   Power MOSFET
2SK2100-01MR FUJI-2SK2100-01MR Datasheet
159Kb / 11P
   Power MOSFET
2SK1390-R FUJI-2SK1390-R Datasheet
341Kb / 10P
   Power MOSFET
2SK2849-01L FUJI-2SK2849-01L Datasheet
224Kb / 12P
   Power MOSFET
logo
International Rectifier
IRLIZ44N IRF-IRLIZ44N Datasheet
105Kb / 8P
   Power MOSFET
logo
Fuji Electric
2SK3523-01R FUJI-2SK3523-01R Datasheet
356Kb / 19P
   POWER MOSFET
2SK903 FUJI-2SK903 Datasheet
161Kb / 10P
   POWER MOSFET
logo
Torex Semiconductor
XP135A1145SR TOREX-XP135A1145SR Datasheet
66Kb / 5P
   POWER MOSFET
logo
List of Unclassifed Man...
CMT10N40 ETC1-CMT10N40 Datasheet
158Kb / 5P
   POWER MOSFET
More results


Html Pages

1 2 3 4 5 6


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com