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SI1077X Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI1077X Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Vishay Siliconix Si1077X Document Number: 63254 S12-3081-Rev. A, 24-Dec-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com P-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • Typical ESD Performance 2500 V • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch for Portable Devices • Power Management Notes: a. Maximum under steady state conditions is 450 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) - 20 0.078 at VGS = - 4.5 V - 1.4 12.1 nC 0.098 at VGS = - 2.5 V - 1 0.130 at VGS = - 1.8 V - 1 0.188 at VGS = - 1.5 V - 0.3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID - 1.75b, c A TA = 70 °C - 1.4b, c Pulsed Drain Current (t = 300 µs) IDM - 8 Continuous Source-Drain Diode Current TA = 25 °C IS - 0.28b, c Maximum Power Dissipation TA = 25 °C PD 0.33b, c W TA = 70 °C 0.21b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t 5 s RthJA 300 375 °C/W Steady State 360 450 Ordering Information: Si1077X-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code Lot Traceability and Date Code Part # Code SC-89 (6-LEADS) 6 4 1 2 3 5 Top View D D G D D S P-Channel MOSFET XX S D G |
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