SI1077X datasheet(1/8 Pages) VISHAY

Teilenummer	SI1077X

Bauteilbeschribung	P-Channel 20 V (D-S) MOSFET

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Vishay Siliconix

Si1077X

Document Number: 63254

S12-3081-Rev. A, 24-Dec-12

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

P-Channel 20 V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

Typical ESD Performance 2500 V

•

100 % Rg Tested

•

Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•

Load Switch for Portable Devices

•

Power Management

Notes:

a. Maximum under steady state conditions is 450 °C/W.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

PRODUCT SUMMARY

VDS (V)

RDS(on) () Max.

ID (A)

Qg (Typ.)

- 20

0.078 at VGS = - 4.5 V

- 1.4

12.1 nC

0.098 at VGS = - 2.5 V

- 1

0.130 at VGS = - 1.8 V

- 1

0.188 at VGS = - 1.5 V

- 0.3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

TA = 25 °C

ID

- 1.75b, c

A

TA = 70 °C

- 1.4b, c

Pulsed Drain Current (t = 300 µs)

IDM

- 8

Continuous Source-Drain Diode Current

TA = 25 °C

IS

- 0.28b, c

Maximum Power Dissipation

TA = 25 °C

PD

0.33b, c

W

TA = 70 °C

0.21b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, b

t

5 s

RthJA

300

375

°C/W

Steady State

360

450

Ordering Information: Si1077X-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code

Lot Traceability

and Date Code

Part # Code

SC-89 (6-LEADS)

6

4

1

2

3

5

Top View

D

G

D

S

P-Channel MOSFET

XX

S

D

G

Ähnliche Beschreibung - SI1077X

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