Datenblatt-Suchmaschine für elektronische Bauteile |
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SI7143DP Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI7143DP Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 65670 S10-0112-Rev. A, 18-Jan-10 www.vishay.com 3 Vishay Siliconix Si7143DP New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 V DS ) V ( e g a t l o V e c r u o S - o t - n i a r D - V GS =10 V thru 5 V V GS =4 V 0.000 0.005 0.010 0.015 0.020 0.025 0.030 015 30 45 60 I D - Drain Current (A) V GS =4.5 V V GS =10 V 0 2 4 6 8 10 0 10203040 50 Q g - Total Gate Charge (nC) I D = 16.1 A V DS = 8V VDS =15 V V DS =24 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.3 0.6 0.9 1.2 012 3 4 V GS -Gate-to-Source Voltage (V) T C = 125 °C T C = - 55 °C T C = 25 °C 0 600 1200 1800 2400 3000 3600 0 6 12 18 24 30 VDS - Drain-Source Voltage (V) Ciss Coss Crss 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (ºC) ID = 16.1 A VGS = 10 V VGS = 4.5 V |
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