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SI7611DN Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI7611DN Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 69939 S-80895-Rev. B, 21-Apr-08 Vishay Siliconix Si7611DN New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD -Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C 1.2 1.5 1.8 2.1 2.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.018 0.028 0.038 0.048 0.058 345 6 7 8 910 VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C ID = 9.3 A 0 10 20 30 40 50 60 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 µs 1ms 10 ms 100 ms Limited byRDS(on)* BVDSS 1s 10 s DC |
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