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2SA1611 Datenblatt(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Teilenummer 2SA1611
Bauteilbeschribung  PNP Silicon Epitaxial Planar Transistor
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Hersteller  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

2SA1611 Datenblatt(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
PNP Silicon Epitaxial Planar Transistor
2SA1611
F033
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA,IE=0
-60
V
Collector-emitter breakdown
voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-60V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-6V,IC=-1mA
90
200
600
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA, IB=-10mA
-0.18
-0.3
V
Transition frequency
fT
VCE=-6V, IC= -10mA
180
MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
4.5
pF
CLASSIFICANTION OF hFE
Range
90-180
135-270
200-400
300-600
marking
M4
M5
M6
M7
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


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