Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF634S Datenblatt(PDF) 4 Page - Vishay Siliconix |
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IRF634S Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com Document Number: 91035 4 S11-1047-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF634S, SiHF634S Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 1750 1400 1050 700 0 350 100 101 VDS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 91035_05 QG, Total Gate Charge (nC) 20 16 12 8 0 4 0 10 50 40 30 20 V DS = 50 V V DS = 125 V For test circuit see figure 13 V DS = 200 V 91035_06 I D = 5.6 A 101 100 VSD, Source-to-Drain Voltage (V) 0.4 1.2 1.0 0.8 0.6 25 °C 150 °C V GS = 0 V 91035_07 10-1 10 µs 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) VDS, Drain-to-Source Voltage (V) T C = 25 °C T J = 150 °C Single Pulse 102 2 5 0.1 2 5 1 2 5 10 2 5 25 110 25 102 103 25 91035_08 103 |
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