IRF830B datasheet(1/8 Pages) VISHAY

Teilenummer	IRF830B

Bauteilbeschribung	D Series Power MOSFET

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IRF830B

www.vishay.com

Vishay Siliconix

S16-0109-Rev. B, 25-Jan-16

1

Document Number: 91520

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

D Series Power MOSFET

FEATURES

• Optimal design

- Low area specific on-resistance

- Low input capacitance (Ciss)

- Reduced capacitive switching losses

- High body diode ruggedness

- Avalanche energy rated (UIS)

• Optimal efficiency and operation

- Low cost

- Simple gate drive circuitry

- Low figure-of-merit (FOM): Ron x Qg

- Fast switching

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Consumer electronics

- Displays (LCD or plasma TV)

• Server and telecom power supplies

- SMPS

• Industrial

- Welding

- Induction heating

- Motor drives

• Battery chargers

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 5 A.

c. 1.6 mm from case.

d. ISD  ID, starting TJ = 25 °C.

PRODUCT SUMMARY

VDS (V) at TJ max.

550

RDS(on) max. () at 25 °C

VGS = 10 V

1.5

Qg max. (nC)

20

Qgs (nC)

3

Qgd (nC)

5

Configuration

Single

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

IRF830BPbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

500

V

Gate-Source Voltage

VGS

± 30

Gate-Source Voltage AC (f > 1 Hz)

30

Continuous Drain Current (TJ = 150 °C)

VGS at 10 V

TC = 25 °C

ID

5.3

A

TC = 100 °C

3.4

Pulsed Drain Current a

IDM

10

Linear Derating Factor

0.83

W/°C

Single Pulse Avalanche Energy b

EAS

28.8

mJ

Maximum Power Dissipation

PD

104

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

Drain-Source Voltage Slope

TJ = 125 °C

dV/dt

24

V/ns

Reverse Diode dV/dt d

0.28

Soldering Recommendations (Peak temperature) c

for 10 s

300

°C

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