Datenblatt-Suchmaschine für elektronische Bauteile |
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SI7633DP Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI7633DP Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 13 page Vishay Siliconix Si7633DP New Product Document Number: 69008 S-82667-Rev. A, 03-Nov-08 www.vishay.com 1 P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Adaptor Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) - 20 0.0033 at VGS = - 10 V - 60 85 nC 0.0055 at VGS = - 4.5 V - 60 Ordering Information: Si7633DP-T1-GE3 (Lead (Pb)-free and Halogen-free) 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK® SO-8 Bottom View S G D P-Channel MOSFET Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 54 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 60a A TC = 70 °C - 60a TA = 25 °C - 34b, c TA = 70 °C - 27b, c Pulsed Drain Current IDM - 100 Continuous Source-Drain Diode Current TC = 25 °C IS - 60a TA = 25 °C - 5.6b, c Single Pulse Avalanche Current L = 0.1 mH IAS - 25 Single Pulse Avalanche Energy EAS 31 mJ Maximum Power Dissipation TC = 25 °C PD 104 W TC = 70 °C 66.6 TA = 25 °C 6.25b, c TA = 70 °C 4.0b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 10 s RthJA 15 20 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 0.9 1.2 |
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