Datenblatt-Suchmaschine für elektronische Bauteile |
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SI7742DP Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI7742DP Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 13 page Document Number: 68718 S10-2003-Rev. B, 06-Sep-10 www.vishay.com 3 Vishay Siliconix Si7742DP TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 16 32 48 64 80 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS =10thru 4 V VGS =3 V 0.0025 0.0029 0.0033 0.0037 0.0041 0.0045 014 28 42 56 70 ID - Drain Current (A) VGS =10 V VGS =4.5 V 0 2 4 6 8 10 0 163248 64 80 Qg - Total Gate Charge (nC) VDS =15 V ID =20A VDS =20 V VDS =10 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0 1234 5 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC =- 55 °C Crss 0 1300 2600 3900 5200 6500 0 6 12 18 24 30 Ciss VDS - Drain-to-Source Voltage (V) Coss 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS =4.5 V VGS =10 V ID =20A |
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