SI8447DB datasheet(4/9 Pages) VISHAY

Teilenummer	SI8447DB

Bauteilbeschribung	P-Channel 20-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Document Number: 64802

S-09-0664-Rev. A, 20-Apr-09

Vishay Siliconix

Si8447DB

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

3

6

9

12

15

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS = 5 V thru 3 V

VGS = 1.5 V

VGS = 2.5 V

VGS = 2 V

0.000

0.050

0.100

0.150

0.200

0.250

0.300

0.350

0

3

6

9

12

15

ID - Drain Current (A)

VGS = 2.5 V

VGS = 4.5 V

VGS = 1.7 V

0

2

4

6

8

10

04

8

12

16

Qg - Total Gate Charge (nC)

ID = 1 A

VDS = 16 V

VDS = 10 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

0.0

0.5

1.0

1.5

2.0

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

Crss

0

200

400

600

800

1000

04

8

12

16

20

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

- 50

- 25

0

25

50

75

100

125

150

ID = 1 A

VGS = 4.5 V

VGS = 2.5 V

TJ - Junction Temperature (°C)

Ähnliche Beschreibung - SI8447DB

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