SI4831BDY datasheet(2/9 Pages) VISHAY

Teilenummer	SI4831BDY

Bauteilbeschribung	P-Channel 30-V (D-S) MOSFET with Schottky Diode

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Document Number: 70483

S09-0394-Rev. B, 09-Mar-09

Vishay Siliconix

Si4831BDY

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VDS = 0 V, ID = - 250 µA

- 30

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

- 30

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

3.6

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1

- 3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 30 V, VGS = 0 V

- 1

µA

VDS = - 30 V, VGS = 0 V, TJ = 75 °C

- 10

On-State Drain Currenta

ID(on)

VDS ≥ - 5 V, VGS = - 10 V

- 10

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 5 A

0.034

0.042

Ω

VGS = - 4.5 V, ID = - 3 A

0.052

0.065

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 5 A

11

S

Dynamicb

Input Capacitance

Ciss

VDS = - 15 V, VGS = 0 V, f = 1 MHz

625

pF

Output Capacitance

Coss

150

Reverse Transfer Capacitance

Crss

115

Total Gate Charge

Qg

VDS = - 15 V, VGS = - 10 V, ID = - 5 A

17

26

nC

VDS = - 15 V, VGS = - 4.5 V, ID = - 5 A

7.8

12

Gate-Source Charge

Qgs

1.6

Gate-Drain Charge

Qgd

3.5

Gate Resistance

Rg

f = 1 MHz

7

14

Ω

Turn-On Delay Time

td(on)

VDD = - 15 V, RL = 3 Ω

ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω

35

55

ns

Rise Time

tr

100

150

Turn-Off Delay Time

td(off)

22

35

Fall Time

tf

12

20

Turn-On Delay Time

td(on)

VDD = - 15 V, RL = 3 Ω

ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω

816

Rise Time

tr

816

Turn-Off Delay Time

td(off)

24

40

Fall Time

tf

714

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current

IS

TC = 25 °C

- 3.3

A

Pulse Diode Forward Currenta

ISM

- 30

Body Diode Voltage

VSD

IS = - 1.4 A, VGS = 0 V

- 0.78

- 1.2

V

Body Diode Reverse Recovery Time

trr

IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C

30

45

ns

Body Diode Reverse Recovery Charge

Qrr

15

25

nC

Reverse Recovery Fall Time

ta

14

ns

Reverse Recovery Rise Time

tb

16

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