Datenblatt-Suchmaschine für elektronische Bauteile |
|
SI5429DU Datenblatt(PDF) 1 Page - Vishay Siliconix |
|
SI5429DU Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si5429DU Document Number: 63933 S12-0804-Rev. A, 16-Apr-12 www.vishay.com 1 For technical support, please contact: pmostechsupport@vishay.com This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P-Channel 30 V (D-S) MOSFET FEATURES •TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area, Thin 0.8 mm Profile - Low On-Resistance • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Power Management for Mobile Computing - Adaptor Switch - Load Switch - DC/DC Converter Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 90 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) - 30 0.015 at VGS = - 10 V - 12a 20 nC 0.022 at VGS = - 4.5 V - 12a Ordering Information: Si5429DU-T1-GE3 (Lead (Pb)-free and Halogen-free) Bottom View PowerPAK ChipFET Single D D D G 1 2 8 7 6 5 D D D S 3 4 S Marking Code BH Lot Traceability and Date Code Part # Code S G D P-Channel MOSFET XXX ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 12a A TC = 70 °C - 12a TA = 25 °C - 11.8b, c TA = 70 °C - 9.4b, c Pulsed Drain Current (t = 300 µs) IDM - 50 Continuous Source-Drain Diode Current TC = 25 °C IS - 12a TA = 25 °C - 11.86b, c Maximum Power Dissipation TC = 25 °C PD 31 W TC = 70 °C 20 TA = 25 °C 3.1b, c TA = 70 °C 2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t 5 s RthJA 34 40 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 34 |
Ähnliche Teilenummer - SI5429DU |
|
Ähnliche Beschreibung - SI5429DU |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |