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74LVC1G11GW Datenblatt(PDF) 2 Page - NXP Semiconductors |
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74LVC1G11GW Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 14 page 9397 750 14209 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 30 November 2004 2 of 14 Philips Semiconductors 74LVC1G11 Single 3-input AND gate 3. Quick reference data [1] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(C L × VCC 2 × f o) = sum of the outputs. [2] The condition is VI = GND to VCC. 4. Ordering information 5. Marking 6. Functional diagram Table 1: Quick reference data GND = 0 V; Tamb =25 °C; tr =tf ≤ 2.5 ns. Symbol Parameter Conditions Min Typ Max Unit tPHL, tPLH propagation delay A, B and C to Y CL = 50 pF; VCC = 3.3 V 1.0 2.6 4.3 ns CI input capacitance - 4 - pF CPD power dissipation capacitance VCC = 3.3 V [1] [2] -13 - pF Table 2: Ordering information Type number Package Temperature range Name Description Version 74LVC1G11GW −40 °C to +125 °C SC-88 plastic surface mounted package; 6 leads SOT363 74LVC1G11GV −40 °C to +125 °C SC-74 plastic surface mounted package; 6 leads SOT457 Table 3: Marking Type number Marking code 74LVC1G11GW VU 74LVC1G11GV V11 Fig 1. Logic symbol Fig 2. IEC logic symbol 001aac033 A B C 1 34 Y 6 001aac029 & 4 1 3 6 |
Ähnliche Teilenummer - 74LVC1G11GW |
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Ähnliche Beschreibung - 74LVC1G11GW |
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