Datenblatt-Suchmaschine für elektronische Bauteile |
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BC807W Datenblatt(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BC807W Datenblatt(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 5 page Production specification PNP Silicon Epitaxial Planar Transistor BC807W F044 www.gmicroelec.com Rev.A 1 FEATURES For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. Complements the BC817W. APPLICATIONS SOT-323 For general purpose amplification and switching. ORDERING INFORMATION Type No. Marking Package Code BC807-16W/25W/40W 5A/5B/5C SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA ICM Peak Collector Current -1 A IB Base Current -0.1 A IBM Peak Base Ccurrent -0.2 A PC Collector Dissipation 250 mW Tj,Tstg Junction and Storage Temperature -65 to +150 ℃ Pb Lead-free |
Ähnliche Teilenummer - BC807W_14 |
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Ähnliche Beschreibung - BC807W_14 |
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