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BC807W Datenblatt(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited

Teilenummer BC807W
Bauteilbeschribung  PNP Silicon Epitaxial Planar Transistor
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Hersteller  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

BC807W Datenblatt(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
PNP Silicon Epitaxial Planar Transistor
BC807W
F044
www.gmicroelec.com
Rev.A
1
FEATURES
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
Complements the BC817W.
APPLICATIONS
SOT-323
For general purpose amplification and switching.
ORDERING INFORMATION
Type No.
Marking
Package Code
BC807-16W/25W/40W
5A/5B/5C
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-500
mA
ICM
Peak Collector Current
-1
A
IB
Base Current
-0.1
A
IBM
Peak Base Ccurrent
-0.2
A
PC
Collector Dissipation
250
mW
Tj,Tstg
Junction and Storage Temperature
-65 to +150
℃
Pb
Lead-free


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