Datenblatt-Suchmaschine für elektronische Bauteile |
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BC817-40W Datenblatt(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BC817-40W Datenblatt(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 5 page Production specification NPN general purpose transistor BC817W/BC818W F076 www.gmicroelec.com Rev.B 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage BC817W BC818W V(BR)CBO IC=10uA,IB=0 50 30 V Collector-emitter breakdown voltage BC817W BC818W V(BR)CEO IC=10mA,IB=0 45 25 V Emitter-base breakdown voltage BC817W BC818W V(BR)EBO IE=10uA,IC=0 5 V Collector cut-off current ICBO VCB=25V,IE=0 VCB=25V,IE=0,Tj=150℃ 100 50 nA μA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA DC current gain hFE VCE=1V,IC=100mA 16W 25W 40W 100 160 250 250 400 600 VCE=1V,IC=300mA 16W 25W 40W 60 100 170 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB= 50mA 1.2 V Transition frequency fT VCE=5V,IC=50mA, f=100MHz 170 MHz Collector-base capacitance CCb VCB=10V,IE=0,f=1MHz 6 pF |
Ähnliche Teilenummer - BC817-40W |
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Ähnliche Beschreibung - BC817-40W |
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