BC807-16W datasheet(2/5 Pages) BILIN

Teilenummer	BC807-16W

Bauteilbeschribung	PNP Silicon Epitaxial Planar Transistor

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Hersteller	BILIN [Galaxy Semi-Conductor Holdings Limited]

Direct Link	http://www.galaxycn.com

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2 / 5 page

Production specification

PNP Silicon Epitaxial Planar Transistor

BC807W

F044

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-10μA,IE=0

-50

V

Collector-emitter breakdown

voltage

V(BR)CEO

IC=-10mA,IB=0

-45

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-10μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-20V,IE=0

-0.1

μA

VCB=-20V,IE=0,TA=150℃

-50

μA

Emitter cut-off current

IEBO

VEB=-4V,IB=0

-0.1

μA

DC current gain

hFE

VCE=-1V,IC=-100mA

BC807-16W

BC807-25W

BC807-40W

100

160

250

160

250

350

250

400

600

VCE=-1V,IC=-300mA

BC807-16W

BC807-25W

BC807-40W

60

100

170

Collector-emitter saturation voltage VCE(sat)

IC=-500mA, IB=-50mA

-0.7

V

Base-emitter voltage

VBE(sat)

IC=-500mA, IB=-50mA

-1.2

V

Transition frequency

fT

VCE=-5V, IC=-50mA

f=100MHz

200

MHz

Collector-base capacitance

Ccb

VCB=-10V,f=1MHz

10

pF

Emitter-base capacitance

Ceb

VEB=-0.5V,f=1MHz

60

pF

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