Datenblatt-Suchmaschine für elektronische Bauteile |
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BC817 Datenblatt(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BC817 Datenblatt(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 5 page Production specification NPN General Purpose Amplifier BC817-16/-25/-40 C042 www.gmicroelec.com Rev.B 2 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=10μA IC=0 5 V Collector cut-off current ICBO VCB=25V IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V IC=0 0.1 μA DC current gain hFE VCE=1V IC=100mA 100 160 250 250 400 600 VCE=1V IC=300mA 60 100 170 Collector-emitter saturation voltage VCE(sat) IC=500mA IB=50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC=500mA IB=50mA 1.2 V Collecter capacitance Cob VCB=10V,f=1MHz 6 pF Transition frequency fT VCE=5V IC=50mA f=100MHz 170 MHz CLASSIFICATION OF HFE(1) Rank BC817-16 BC817-25 BC817-40 Range 100-250 160-400 250-600 Marking 6A 6B▪ 6C TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
Ähnliche Teilenummer - BC817 |
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Ähnliche Beschreibung - BC817 |
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