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AM29F160DB120EC Datenblatt(PDF) 2 Page - Advanced Micro Devices

Teilenummer AM29F160DB120EC
Bauteilbeschribung  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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Hersteller  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

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Publication# 22288
Rev: D Amendment/0
Issue Date: December 4, 2000
Am29F160D
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s 5.0 Volt single power supply operation
— Minimizes system-level power requirements
s High performance
— Access times as fast as 70 ns
s Manufactured on 0.25 µm process technology
s CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
s Ultra low power consumption (typical values at
5MHz)
— 15 mA typical active read current
— 35 mA typical erase/program current
— 300 nA typical standby mode current
s Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
thirty-one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
thirty-one 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
— Hardware method of locking a sector to prevent
program or erase operations within that sector
— Sectors can be locked in-system or via
programming equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s Top boot or bottom boot configurations
available
s Minimum 1,000,000 write cycle guarantee
per sector
s 20-year data retention at 125
°C
— Reliable operation for the life of the system
s Package options
— 48-pin TSOP
s Compatibile with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
s Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
s Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
s Unlock Bypass Program command
— Reduces overall programming time when
issuing multiple program command sequences
s Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
s Hardware reset pin (RESET#)
— Hardware method to reset the device for reading
array data
s WP# input pin
—At VIL, protects the 16 Kbyte boot sector,
regardless of sector protect/unprotect status
—At VIH, allows removal of boot sector protection
s Program and Erase Performance
— Sector erase time: 1 s typical for each 64 Kbyte
sector
— Byte program time: 7 µs typical


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