Datenblatt-Suchmaschine für elektronische Bauteile |
|
MTB9D0N10RE3-0-UB-X Datenblatt(PDF) 6 Page - Cystech Electonics Corp. |
|
MTB9D0N10RE3-0-UB-X Datenblatt(HTML) 6 Page - Cystech Electonics Corp. |
6 / 8 page CYStech Electronics Corp. Spec. No. : C169E3 Issued Date : 2017.02.14 Revised Date : 2017.04.05 Page No. : 6/ 8 MTB9D0N10RE3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0 40 80 120 160 200 01 23 45 6 VGS, Gate-Source Voltage(V) VDS=10V Single Pulse Power Rating, Junction to Case 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) TJ(MAX)=175°C TC=25°C RθJC=1.5°C/W Transient Thermal Response Curves 0.01 0.1 1 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.5°C/W |
Ähnliche Teilenummer - MTB9D0N10RE3-0-UB-X |
|
Ähnliche Beschreibung - MTB9D0N10RE3-0-UB-X |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |