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LM25141 Datenblatt(PDF) 5 Page - Texas Instruments |
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LM25141 Datenblatt(HTML) 5 Page - Texas Instruments |
5 / 50 page 5 LM25141 www.ti.com SNVSAU1 – MARCH 2017 Product Folder Links: LM25141 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22- C101(2) ±500 (1) Recommended Operating Conditions are conditions under which the device is intended to be functional. For specifications and test conditions, see Electrical Characteristics. (2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) (1) MIN NOM MAX UNIT VIN Input voltage VIN 3.8 42 V SW to PGND –0.3 42 V HB to SW –0.3 5 5.25 V HO, HOL to SW –0.3 HB + 0.3 V LO, LOL to PGND –0.3 5 5.25 V FB, PG, OSC, SS, RES, DEMB, VCCX –0.3 5 V EN to PGND –0.3 42 V VCC, VDD –0.3 5 5.25 V VOUT, CS 1.5 5 15 V PGND to AGND –0.3 0.3 V Operating junction temperature(2) –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) LM5141 UNIT RGE (QFN) 24 PINS RθJA Junction-to-ambient thermal resistance 34.1 °C/W RθJC(top) Junction-to-case (top) thermal resistance 36.8 °C/W RθJB Junction-to-board thermal resistance 12.1 °C/W ψJT Junction-to-top characterization parameter 0.5 °C/W ψJB Junction-to-board characterization parameter 12.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 2.9 °C/W |
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