Datenblatt-Suchmaschine für elektronische Bauteile |
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STP4N90K5 Datenblatt(PDF) 3 Page - STMicroelectronics |
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STP4N90K5 Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 13 page STP4N90K5 Electrical ratings DocID029953 Rev 1 3/13 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 3 A ID Drain current (continuous) at TC = 100 °C 1.9 A ID(1) Drain current (pulsed) 12 A PTOT Total dissipation at TC = 25 °C 60 W dv/dt (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 Tj Operating junction temperature range - 55 to 150 °C Tstg Storage temperature range Notes: (1)Pulse width limited by safe operating area (2)ISD ≤ 3 A, di/dt ≤ 100 A/μs; VDS peak < V(BR)DSS, VDD = 450 V. (3)VDS ≤ 720 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 2.08 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 1 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 160 mJ |
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