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STPSC6H12 Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STPSC6H12
Bauteilbeschribung  1200 V power Schottky silicon carbide diode
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
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STPSC6H12 Datenblatt(HTML) 2 Page - STMicroelectronics

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Characteristics
STPSC6H12
2/8
DocID024631 Rev 5
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.89 x IF(AV) + 0.285 x IF
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
1200
V
IF(RMS)
Forward rms current
11
A
IF(AV)
Average forward current
Tc = 125 °C,  = 0.5, DC
6
A
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 150 °C
tp = 10 µs square, Tc = 25 °C
36
30
100
A
IFRM
Repetitive peak forward current
 = 0.1, T
c = 125 °C
28
A
Tstg
Storage temperature range
-65 to +175
°C
Tj
Operating junction temperature range(1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
-40 to +175
°C
Table 3. Thermal resistance
Symbol
Parameter
Typ.
Max.
Unit
Rth(j-c)
Junction to case
1.3
1.9
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
1. tp = 10 ms,  < 2%
Reverse leakage
current
Tj = 25 °C
VR = VRRM
-100
400
µA
Tj = 150 °C
-
0.65
1.5
mA
VF
(2)
2. tp = 500 µs,  < 2%
Forward voltage drop
Tj = 25 °C
IF = 6 A
-1.55
1.9
V
Tj = 150 °C
-
2.05
2.6
Table 5. Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Typ.
Unit
Qcj
(1)
1. Most accurate value for the capacitive charge:
Total capacitive charge
VR = 800 V
29
nC
Cj
Total capacitance
VR = 0 V, Tc = 25 °C, F = 1 MHz
330
pF
VR = 300 V, Tc = 25 °C, F = 1 MHz
30
dPtot
dTj
<
1
Rth(j-a)


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