STPSC10H065-Y datasheet(4/11 Pages) STMICROELECTRONICS

Teilenummer	STPSC10H065-Y

Bauteilbeschribung	Automotive 650 V power Schottky silicon carbide diode

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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Characteristics

STPSC10H065-Y

4/11

DocID026618 Rev 4

1.1

Characteristics (curves)

Figure 1: Forward voltage drop versus forward

current (typical values, low level)

Figure 2: Forward voltage drop versus forward

current (typical values, high level)

Figure 3: Reverse leakage current versus reverse

voltage applied (typical values)

Figure 4: Peak forward current versus case

temperature

Figure 5: Junction capacitance versus reverse

voltage applied (typical values)

Figure 6: Relative variation of thermal impedance

junction to case versus pulse duration

0

2

4

6

8

10

12

14

16

18

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

T

a=150 °C

T

a=175 °C

T

a=25 °C

Pulse test : t

p= 500µs

T

a=100 °C

VF(V)

IF(A)

0

10

20

30

40

50

60

70

80

90

100

0

1

2

3

4

5

6

7

8

T

a=150 °C

T

a=175 °C

T

a=25 °C

Pulse test : t

p= 500µs

T

a=100 °C

VF(V)

IF(A)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

0

50

100 150 200 250 300 350 400 450 500 550 600 650

T

j=25 °C

T

j=150 °C

T

j=175 °C

VR(V)

IR(µA)

0

50

100

150

200

250

300

350

400

450

500

0.1

1.0

10.0

100.0

1000.0

F = 1 MHz

V

OSC = 30 mVRMS

T

j = 25 °C

VR(V)

Cj(pF)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

Zth(j-c) /Rth(j-c)

Ähnliche Beschreibung - STPSC10H065-Y

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
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