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STPSC15H12-Y Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STPSC15H12-Y
Bauteilbeschribung  Robust high voltage periphery
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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STPSC15H12-Y Datenblatt(HTML) 2 Page - STMicroelectronics

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Characteristics
STPSC15H12-Y
2/8
DocID029723 Rev 1
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)
1200
V
IF(RMS)
Forward rms current
38
A
IF(AV)
Average forward current
TC = 155 °C, DC current
15
A
IFRM
Repetitive peak forward
current
TC = 155 °C, Tj
= 175 °C, δ = 0.1
58
A
IFSM
Surge non repetitive
forward current
tp = 10 ms sinusoidal
TC = 25 °C
105
A
TC = 150 °C
90
tp = 10 µs square
TC = 25 °C
630
Tstg
Storage temperature range
-65 to +175
°C
Tj
Operating junction temperature
-40 to +175
°C
Table 3: Thermal parameters
Symbol
Parameter
Typ.
value
Max.
value
Unit
Rth(j-c)
Junction to case
0.45
0.6
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
7.5
90
µA
Tj = 150 °C
-
45
600
VF(2)
Forward voltage drop
Tj = 25 °C
IF = 15 A
-
1.35
1.50
V
Tj = 150 °C
-
1.75
2.25
Notes:
(1)Pulse test: tp = 10 ms, δ < 2%
(2)Pulse test: tp = 500 µs, δ < 2%
To evaluate the conduction losses use, the following equation:
P = 1.09 x IF(AV) + 0.0775 x IF2(RMS)
Table 5: Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
QCj(1)
Total capacitive charge
VR = 800 V
-
94
-
nC
Cj
Total capacitance
VR = 0 V, Tc = 25 °C, F = 1 MHz
-
1200
-
pF
VR = 800 V, Tc = 25 °C, F = 1 MHz
-
78
-
Notes:
(1)Most accurate value for the capacitive charge:
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