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STPSC15H12-Y Datenblatt(PDF) 2 Page - STMicroelectronics |
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STPSC15H12-Y Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 8 page Characteristics STPSC15H12-Y 2/8 DocID029723 Rev 1 1 Characteristics Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) 1200 V IF(RMS) Forward rms current 38 A IF(AV) Average forward current TC = 155 °C, DC current 15 A IFRM Repetitive peak forward current TC = 155 °C, Tj = 175 °C, δ = 0.1 58 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal TC = 25 °C 105 A TC = 150 °C 90 tp = 10 µs square TC = 25 °C 630 Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature -40 to +175 °C Table 3: Thermal parameters Symbol Parameter Typ. value Max. value Unit Rth(j-c) Junction to case 0.45 0.6 °C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 25 °C VR = VRRM - 7.5 90 µA Tj = 150 °C - 45 600 VF(2) Forward voltage drop Tj = 25 °C IF = 15 A - 1.35 1.50 V Tj = 150 °C - 1.75 2.25 Notes: (1)Pulse test: tp = 10 ms, δ < 2% (2)Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses use, the following equation: P = 1.09 x IF(AV) + 0.0775 x IF2(RMS) Table 5: Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit QCj(1) Total capacitive charge VR = 800 V - 94 - nC Cj Total capacitance VR = 0 V, Tc = 25 °C, F = 1 MHz - 1200 - pF VR = 800 V, Tc = 25 °C, F = 1 MHz - 78 - Notes: (1)Most accurate value for the capacitive charge: ������������(��������) = ∫ ��������(����)�������� �������� 0 |
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