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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BCW30 Datenblatt(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BCW30 Datenblatt(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 4 page  Production specification PNP General Purpose Amplifier BCW30 C103 www.gmicroelec.com Rev.B 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA IE=0 -32 V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA IC=0 -5 V Collector cut-off current ICBO VCB=-32V IE=0 -0.1 μ A Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μ A DC current gain hFE VCE=-5V IC=-10µA VCE=-5V IC=-2mA 215 150 500 Collector-emitter saturation voltage VCE(sat) IC=-10mA IB=-0.5mA IC=-50mA IB=-2.5mA -0.08 -0.15 -0.3 V Base-emitter on voltage VBE(on) IC=-2mA,VCE=-5V -0.6 -0.7 V Collector capacitance Cob VCB=-10V IE=-0 f=1MHz 4.5 pF Transition frequency fT IC=-10mA,VCE=-5V, f=100MHz 100 MHz Noise figure F IC=-200µA,VCE=-5V,RS=2kΩ, f=1kHz,B=200Hz 10 dB TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
Ähnliche Teilenummer - BCW30 |
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Ähnliche Beschreibung - BCW30 |
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