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STF21NM60ND Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer STF21NM60ND
Bauteilbeschribung  Low input capacitance and gate charge
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Electrical characteristics
STP/F21NM60ND - STB21NM60ND - STI21NM60ND - STW21NM60ND
4/18
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ.
Max.
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
600
V
dv/dt(1)
1.
Characteristic value at turn off on inductive load
Drain source voltage slope
VDD= 480 V, ID= 17 A,
VGS= 10 V
48
V/ns
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating @125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 8.5 A
0.170
0.220
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward transconductance
VDS = 15 V, ID = 8 A
12
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
1800
90
8
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
300
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =300 V, ID = 8.5 A
RG =4.7 Ω, VGS = 10 V
(see Figure 23),
(see Figure 18)
18
16
70
48
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 17 A,
VGS = 10 V,
(see Figure 19)
60
10
30
nC
nC
nC
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
Open drain
3


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