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STP42N60M2-EP Datenblatt(PDF) 3 Page - STMicroelectronics |
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STP42N60M2-EP Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 20 page STB42N60M2-EP, STP42N60M2-EP, STW42N60M2-EP Electrical ratings DocID027327 Rev 1 3/20 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 34 A ID Drain current (continuous) at TC = 100 °C 22 A IDM (1) Drain current (pulsed) 136 A PTOT Total dissipation at TC = 25 °C 250 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 °C Notes: (1) Pulse width limited by safe operating area. (2) ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V. (3) VDS ≤ 480 V Table 3: Thermal data Symbol Parameter Value Unit D²PAK TO-220 TO- 247 Rthj-case Thermal resistance junction-case max 0.50 °C/W Rthj-pcb (1) Thermal resistance junction-pcb max 30 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 50 °C/W Notes: (1) When mounted on FR-4 board of inch², 2oz Cu. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 6 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) 800 mJ |
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