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STP42N60M2-EP Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STP42N60M2-EP
Bauteilbeschribung  N-channel 600 V, 0.076typ., 34 A MDmesh??M2 EP Power MOSFETs in D짼PAK, TO-220 and TO-247 packages
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STP42N60M2-EP Datenblatt(HTML) 3 Page - STMicroelectronics

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STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Electrical ratings
DocID027327 Rev 1
3/20
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
34
A
ID
Drain current (continuous) at TC = 100 °C
22
A
IDM
(1)
Drain current (pulsed)
136
A
PTOT
Total dissipation at TC = 25 °C
250
W
dv/dt
(2)
Peak diode recovery voltage slope
15
V/ns
dv/dt
(3)
MOSFET dv/dt ruggedness
50
V/ns
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Notes:
(1)
Pulse width limited by safe operating area.
(2)
ISD
≤ 34 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V.
(3)
VDS
≤ 480 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
D²PAK
TO-220
TO-
247
Rthj-case
Thermal resistance junction-case max
0.50
°C/W
Rthj-pcb
(1)
Thermal resistance junction-pcb max
30
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
50
°C/W
Notes:
(1)
When mounted on FR-4 board of inch², 2oz Cu.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not
repetetive (pulse width limited by Tjmax)
6
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR; VDD = 50 V)
800
mJ


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