Datenblatt-Suchmaschine für elektronische Bauteile |
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STP9N60M2 Datenblatt(PDF) 7 Page - STMicroelectronics |
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STP9N60M2 Datenblatt(HTML) 7 Page - STMicroelectronics |
7 / 21 page DocID024399 Rev 2 7/21 STD9N60M2, STP9N60M2, STU9N60M2 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance VGS 6 4 2 0 0 2 Qg(nC) (V) 8 8 4 6 10 VDD=480V ID=5.5A 10 12 0 100 200 300 400 500 VDS VDS (V) AM15869v1 RDS(on) 0.720 0.710 0.700 0.690 0 4 ID(A) ( Ω) 2 0.730 0.740 0.750 13 5 0.760 VGS=10A AM15868v1 Figure 10. Capacitance variations Figure 11. Output capacitance stored energy Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on-resistance vs temperature C 100 10 1 0.1 0.1 1 VDS(V) (pF) 10 Ciss Coss Crss 100 1000 AM15870v1 Eoss 2 1 0 0 100 VDS(V) (µJ) 400 200 300 500 600 AM15874v1 VGS(th) 0.8 0.7 -50 0 TJ(°C) (norm) -25 0.9 75 25 50 100 125 1.0 1.1 ID=250µA AM15871v1 RDS(on) 1.1 0.9 0.7 0.5 -50 TJ(°C) (norm) -25 25 0 50 125 1.7 1.5 1.3 VGS=10 V ID=3 A 75 100 1.9 2.1 2.3 2.5 AM15872v1 |
Ähnliche Teilenummer - STP9N60M2 |
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Ähnliche Beschreibung - STP9N60M2 |
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