Datenblatt-Suchmaschine für elektronische Bauteile |
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STU9N65M2 Datenblatt(PDF) 8 Page - STMicroelectronics |
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STU9N65M2 Datenblatt(HTML) 8 Page - STMicroelectronics |
8 / 23 page Electrical characteristics STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 8/23 DocID025975 Rev 2 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on-resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized V(BR)DSS vs temperature VGS(th) 1.0 0.9 0.8 0.7 -50 0 TJ(°C) (norm) -25 1.1 75 25 50 100 ID=250 µA AM18065v1 RDS(on) 1.9 1.3 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.7 2.1 2.3 ID=2.5A VGS=10V AM18066v1 VSD 2 ISD(A) (V) 1 3 4 0.5 0.6 0.7 TJ=-50°C TJ=150°C TJ=25°C 0.8 0.9 1 AM18068v1 V(BR)DSS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.91 0.93 0.95 0.97 0.99 1.01 1.03 1.05 ID=1mA 1.07 1.09 1.11 AM18067v1 |
Ähnliche Teilenummer - STU9N65M2 |
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Ähnliche Beschreibung - STU9N65M2 |
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