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STD110N8F6 Datenblatt(PDF) 8 Page - STMicroelectronics

Teilenummer STD110N8F6
Bauteilbeschribung  Very low gate charge
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD110N8F6 Datenblatt(HTML) 8 Page - STMicroelectronics

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Test circuits
STD110N8F6
8/16
DocID027274 Rev 1
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μF
VDD
AM01469v1
VDD
47k
Ω
1k
Ω
47k
Ω
2.7k
Ω
1k
Ω
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100
Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25
Ω
A
A
B
B
RG
G
FAST
DIODE
D
S
L=100
μH
μF
3.3
1000
μF
VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μF
VDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon
tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS


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