STF7N65M2 datasheet(4/13 Pages) STMICROELECTRONICS

Teilenummer	STF7N65M2

Bauteilbeschribung	Extremely low gate charge

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Electrical characteristics

STF7N65M2

4/13

DocID026763 Rev 2

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 1 mA

650

V

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 650 V

1

µA

VGS = 0, VDS = 650 V,

TC=125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 2.5 A

0.98

1.15

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-270

-

pF

Coss

Output capacitance

-

14.5

-

pF

Crss

Reverse transfer

capacitance

-0.8

-

pF

Coss eq.

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VDS = 0 to 520 V, VGS = 0

-

108

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

7

-

Ω

Qg

Total gate charge

VDD = 520 V, ID = 5 A,

VGS = 10 V

(see Figure 15)

-9

-

nC

Qgs

Gate-source charge

-

2.3

-

nC

Qgd

Gate-drain charge

-

4.3

-

nC

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 2.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 14 and 19)

-8

-

ns

tr

Rise time

-

20

-

ns

td(off)

Turn-off delay time

-

30

-

ns

tf

Fall time

-

20

-

ns

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